View MC1382109_4824283.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Data Sheet: Technical Data
Document Number: MC13821 Rev. 1.5, 09/2009
MC13821
MC13821
Low Noise Amplifier with Bypass Switch
Device MC13821
Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Marking or Operating Temperature Range 821 Package QFN-12
1
Introduction
Contents:
1 2 3 4 5 6 7 8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Electrical Specifications . . . . . . . . . . . . . . . . 3 Application Information . . . . . . . . . . . . . . . . 10 Printed Circuit Board . . . . . . . . . . . . . . . . . . 28 Scattering Parameters . . . . . . . . . . . . . . . . . 32 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Reference Documentation . . . . . . . . . . . . . . 42 Revision History . . . . . . . . . . . . . . . . . . . . . . 42
The MC13821 is a high gain LNA with extremely low noise figure, designed for cellular, GPS and ISM band applications. An integrated bypass switch is included to preserve input intercept performance. The input and output match are external to allow maximum design flexibility. The MC13821 is fabricated using Freescale's advanced RF BiCMOS process using the SiGe:C option and is packaged in the QFN-12 leadless package.
1.1
* * *
Features
RF Input Frequency: 1000 MHz to 2.4 GHz Gain: 16.4 dB (typ) at 1960 MHz and 15.7 dB (typ) at 2140 MHz Output 3rd Order Intercept Point (OIP3): 17.4 dBm (typ) at 1960 MHz and 19.7 dBm (typ) at 2140 MHz Noise Figure (NF): 1.25 dB (typ) at 1960 MHz and 1.3 dB (typ) at 2140 MHz 1dB Compression Point (P1dB): -6 dBm (typ) at 1960 MHz and -5 dBm (typ) at 2140 MHz
* *
This document contains information on a new product. Specifications and information herein are subject to change without notice. (c) Freescale Semiconductor, Inc., 2005-2009. All rights reserved.
Introduction
* * *
* * *
Freescale's IP3 Boost Circuitry Bypass Mode Included for Improved Intercept Point Performance Total Supply Current: 2.8 mA @ 2.7 Vdc 10 A (typ) in Bypass Mode Bias Stabilized for Device and Temperature Variations QFN-12 Leadless Package with Low Parasitics SiGe Technology Ensures Lowest Possible Noise Figure
NC 12
NC 11
NC 10
NC
1
MC13821
9
Gnd
VCC1
2 Logic
8
Gain
LNA Out
3
7
Enable
4 Rbias
5 Emit Gnd
6 LNA In
Figure 1. Simplified Block Diagram
MC13821 Data Sheet: Technical Data, Rev. 1.5 2 Freescale Semiconductor
Electrical Specifications
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings Symbol VCC Tstg TA Prf Pdis RJC RJA Minimum 2.7 -65 -30 -- -- 24 90 Typical 2.75 25 25 -30 -- 24 90 Maximum 3.3 150 85 10 100 24 90 Unit V C C dBm mW C/W C/W
Supply Voltage Storage Temperature Range Operating Ambient Temperature Range RF Input Power Power Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient, 4 Layer Board
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 200 V, Charge Device Model (CDM) 450 V, and Machine Model (MM) 50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic RF Frequency range Supply Voltage Logic Voltage Input High Voltage Input Low Voltage Symbol fRF VCC -- -- Minimum 1000 2.7 1.25 0 Typical -- 2.75 1.8 0 Maximum 2400 3 VCC 0.8 Unit MHz V V
Table 3. Electrical Characteristics
(VCC = 2.75 V, TA = 25C, unless otherwise noted.) Characteristic Insertion Gain R1=1.2 k, Freq=1.960 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.960 GHz R1=2 k, Freq=2.14 GHz Maximum Stable Gain and/or Maximum Available Gain1 R1=1.2 k, Freq=1.960 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.960 GHz R1=2 k, Freq=2.14 GHz Minimum Noise Figure R1=1.2 k, Freq=1.960 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.960 GHz R1=2 k, Freq=2.14 GHz Symbol |S21|2 15.0 14.5 13.3 13 MSG, MAG 20.0 19.5 19.5 19.5 NFmin 0.9 0.9 0.9 0.9 1.01 0.96 1.01 0.96 1.1 1.05 1.1 1.05 21.0 20.5 20.5 19.8 22.0 21.5 21.5 21.0 dB 16.0 15.6 14.3 14.2 17.0 16.5 15.3 15.2 dB Minimum Typical Maximum Unit dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 3
Electrical Specifications
Table 3. Electrical Characteristics (continued)
(VCC = 2.75 V, TA = 25C, unless otherwise noted.) Characteristic Associated Gain at Minimum Noise Figure R1=1.2 k, Freq=1.960 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.960 GHz R1=2 k, Freq=2.14 GHz
1
Symbol Gnf
Minimum
Typical
Maximum
Unit dB
19.8 19 19.6 19
20.8 19.8 20.5 19.8
21.8 20.8 21.5 20.8
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
S 2 21 MAG = ---------- K K - 1 S 12
, if K > 1,
S 21 MSG = ---------S 12
, if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(VCC = 2.75 V, TA = 25C, Rbias = 2 k, unless otherwise noted.) Characteristic 1575 MHz (Refer to Figure 9) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current 1960 MHz (Refer to Figure 10) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 -- 15 1.0 -0.5 -7 2.3 -6 3.9 23 2 1960 16.4 1.25 1 -6 2.8 -3.9 4.7 25 4 -- 17.4 1.45 2 -5 3.3 -3 6 26 20 MHz dB dB dBm dBm mA dB dB dBm A f G NF IIP3 P1dB ICC G NF IIP3 -- 16 1.0 -1.0 -11 2.3 -6.0 3.9 24 2 1575 17.7 1.25 0.5 -10 2.8 -4.1 4.8 26 4 -- 18.7 1.45 1.5 -9 3.3 -3.1 6 27 20 MHz dB dB dBm dBm mA dB dB dBm A Symbol Minimum Typical Maximum Unit
MC13821 Data Sheet: Technical Data, Rev. 1.5 4 Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25C, Rbias = 2 k, unless otherwise noted.) Characteristic Symbol Minimum Typical Maximum Unit
1960 MHz (R1 = 1.3 k, R2 = 68 , C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH) (Refer to Figure 10) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 -- 10.5 1.1 -2 -15 3.6 -6.5 3.8 20 2 1960 11.5 1.3 0 -10 4.5 -3.5 4.7 21 4 -- 13 1.9 1 -- 5.5 -3 6 22 20 MHz dB dB dBm dBm mA dB dB dBm A
1960 MHz (R1 = 1.8 k, R2 = 330 , C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH) (Refer to Figure 10) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current 2140 MHz (Refer to Figure 11) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 -- 14.7 1.1 2.5 -6.0 2.3 -4.2 3.0 22.5 2 2140 15.7 1.3 3.5 -5 2.8 -3.2 4.2 24.5 4 -- 17.5 1.5 4.5 -4 3.8 -2.2 6 25.5 20 MHz dB dB dBm dBm mA dB dB dBm A f G NF IIP3 P1dB ICC G NF IIP3 -- 13.8 1.1 -2 -10 2.3 -6.5 3.8 16 2 1960 14.8 1.3 0 -5 2.8 -3.5 4.7 18 4 -- 16 1.9 1 -4 5.5 -3 6 18.5 20 MHz dB dB dBm dBm mA dB dB dBm A
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 5
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25C, Rbias = 2 k, unless otherwise noted.) Characteristic Symbol Minimum Typical Maximum Unit
2140 MHz (R1 = 1.5 k, R2 = 10 k, C2 = 1 pF) (Refer to Figure 11) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 -- 14.5 1.1 2 -5 3.4 -5 3.2 18 2 2140 15.7 1.3 5 -4 4.45 -4 4.2 20 4 -- 17.5 1.8 5.5 -3 5.5 -3 6 21 20 MHz dB dB dBm dBm mA dB dB dBm A
2140 MHz (R1 = 1.2 k, R2 = 3.3 k,, R3 = 10 , C1 = 8 pF, C2 = 1 pF) (Refer to Figure 12) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current 2400 MHz (Refer to Figure 13) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 -- 13 1.3 3.0 -5.0 2.3 -4.5 3.2 22 2 2400 14 1.49 4.0 -3.8 2.8 -3.6 4.2 24 4 -- 16 1.65 5.0 -3 3.2 -2.9 6 25 20 MHz dB dB dBm dBm mA dB dB dBm A f G NF IIP3 P1dB ICC G NF IIP3 -- 13.7 1.3 3.5 -8 3.9 -4.9 3 18 2 2140 14.5 1.49 5.0 -7 4.45 -4.4 4.3 20 4 -- 15.5 1.65 6.0 -6 5.5 -3.9 6 21 20 MHz dB dB dBm dBm mA dB dB dBm A
MC13821 Data Sheet: Technical Data, Rev. 1.5 6 Freescale Semiconductor
Electrical Specifications
Table 5. Truth Table
Enable Pin Function Pin Name Low Gain Circuit Bias VCC1 Toggles Gain Mode (Active or Bypass) Toggles LNA On/Off LNA Bias VCC3
NOTES: 1. 2. 3. 4.
Disable High Gain 1 1 1 1 Low Gain 1 0 0 1 High Gain 1 1 0 1
VCC1 GAIN ENABLE LNA Out
1 0 1 1
Logic state "1" equals VCC voltage. Logic state of "0" equals ground potential. VCC3 is inductively coupled to LNA OUT pin Minimum logic state "1" for enable and gain pins is 1.25 V. Minimum logic state "0" for enable and gain pins is 0.8 V.
Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency Rbias is 2 kohm
30 MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain, (dB) 25 20 15 |S21|2 10 5 0 0.5 1.5 2.5 3.5 4.5 5.5 f, Frequency (GHz) MAG
MSG
Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 2 k)
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 7
Electrical Specifications
Maxim um Stable/Available Gain and Forw ard Insertion Gain vs. Frequency Rbias is 1.2 kohm 35 30 25 20 MAG 15 10 5 0 0.5 1.5 2.5 f, Frequency (GHz) 3.5 4.5 |S21|2 MSG M
Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 1.2 k)
MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain (dB)
Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
24 MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain (dB) 23 MSG/MAG 1.575 GHz 22 MSG/MAG 1.96 GHz 21 20 MSG/MAG 2.14 GHz 19 18 17 16 15 14 2.5 3 3.5 4 Icc (m A) 4.5 5 5.5
S|21|2 1.575 GHz
S|21|2 1.96 GHz
S|21|2 2.14 GHz
Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
MC13821 Data Sheet: Technical Data, Rev. 1.5 8 Freescale Semiconductor
Electrical Specifications
Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 2 kohm
1.2 NFmin, Minimum Noise Figure (dB) 1.15 1.1 1.05 Gnf
30 Gnf, Associated Gain (dB) Gnf, Associated Gain (dB) 25 20 15
1 0.95 0.9 0.85 1000
NFm in
10 5 0 2400
1200
1400
1600
1800
2000
2200
f, Frequency (MHz)
Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 2 k)
Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 1.2 kohm
1.12 NFmin, Minimum Noise Figure (dB) 1.1 1.08 1.06 1.04 1.02 1 0.98 1000 NFm in Gnf
30 25 20 15 10 5 0 2400
1200
1400
1600
1800
2000
2200
f, Frequency (MHz)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 1.2 k)
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 9
Application Information
Input 3rd Order Intercept Point vs. Icc 1960 MHz Application Ckt.
6 4 2 0 -2 -4 -6 1.5 2.5 3.5 Icc (mA) 4.5 5.5
Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit (Rbias varied from 1.2 k to 3 k)
Input 3rd Order Intercept Point (dBm)
Input 3rd Order Intercept Point vs. Icc 2140 MHz Application Circuit
6 5 4 3 2 1 0 -1 -2 1 2 3 Icc (mA) 4 5 Input 3rd Order Intercept Point, IIP3 (dBm)
Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit (Rbias varied from 1.2 k to 3 k)
3
Application Information
The MC13821 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain and Enable pins. The logic truth table is given in Table 5. In these application examples a balance is made between the competing RF performance characteristics of ICC, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For a particular application or spec requirement, the matching can be changed to achieve enhanced performance of one parameter at the expense of other parameters.
MC13821 Data Sheet: Technical Data, Rev. 1.5 10 Freescale Semiconductor
Application Information
Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 k and 2 k, see Table 6, Table 7, Table 8, and Table 9. These two current drain states offer variation in intercept point, gain, and noise figure. For 1960 and 2140 MHz, additional application circuits are shown. These demonstrate specific performance characteristics and utilize varying input and output matches and different biasing resistors. Measurements are made at a bias of VCC = 2.75 V. Freq. spacing for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dB. The board loss corrections for these boards are: Input 0.16 dB, Output 0.2 dB. Gain and NF results incorporate these corrections in order to better reflect the actual performance of the device.
3.1
1575 MHz Application
This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 6. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
NC 12 NC 11 NC 10
N C C5 .01uf Vcc1 C2 1 pf L2 5.6 nH R2 680 C3 33 pf C4 .01uf C6 33 pf
1
MC13821 1575 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3
7
Enable
4 R1 2k
5
6
Vcc3
Rbias
L1 5.6 nH
LNA IN C1 22pF
Figure 9. 1575 MHz LNA Application Schematic
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 11
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 620 Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1= 2.0 k, R2 = 680 Frequency f -- 1575.42 -- MHz S11 -- -- S21 16 -6 S12 -22 -3 S22 -- -- -13.9 -6.8 -11 -5 -23.7 -4.4 -- -- dB 18.0 -4.1 19 -3.1 dB -15.5 -8.1 -10 -5 dB f G 17 -6 OIP3 16 18 IIP3 -1 24 P1dBout 8 -- P1dBin -9 -- NF 1.0 3.9 ICC 3.9 2.0 -- -- 4.45 4.0 1.2 620 5.5 20 -- -- mA A k dB 1.25 4.8 1.45 6 -8.0 -- -7.0 -- dB 10 -- 12 -- dBm 2.0 25.5 3.0 26.5 dBm 20 20.8 22 22.5 dBm 18 -4.7 19 -4 dBm -- 1575.42 -- MHz dB Symbol Minimum Typical Maximum Unit
MC13821 Data Sheet: Technical Data, Rev. 1.5 12 Freescale Semiconductor
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 -- -- S21 16 -6 S12 -22 -3 S22 -- -- -10.8 -7.2 -9 -5 -22.9 -4.3 -- -- dB 17.7 -4.1 18.7 -3.1 dB -13.5 -9.0 -10 -7 dB Symbol G 16 -6 OIP3 16 18 IIP3 -1 24 P1dBout 6 -- P1dBin -11 -- NF 1.0 3.9 ICC 2.3 2.0 -- -- 2.8 4.0 2.0 680 3.3 20 -- -- mA A k dB 1.25 4.8 1.45 6 -10 -- -9 -- dB 8 -- 9.7 -- dBm 0.5 26 1.5 27 dBm 18.5 21.7 20.5 -- dBm 17.7 -5.0 18.7 -4 dBm Minimum Typical Maximum Unit dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 13
Application Information
3.2
1960 MHz Application
These application circuits are designed to demonstrate performance at 1960 MHz. By varying the value of resistor R1, the current draw and the IP3 performance of the device can be tailored for a particular application. Shown here are four variations of the circuit for different IP3 and ICC requirements. The input and output matches are also changed on some circuits to demonstrate different NF and gain performance. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 7. Two variations of the circuit utilize different matches. For all circuits the match consists of a highpass match on the output and a simple inductor-capacitor network on the LNA input.
NC 12 NC 11 NC 10
NC C5 .01uf Vcc1 C2 0.9pf L2 2.7 nH C6 33 pf
1
MC13821 1960 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 3.3 k C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
4
5
6
L1 4.3 nH
LNA IN C1 33pF
Figure 10. 1960 MHz LNA Application Schematic Table 7. Typical 1960 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass f G 15 -6 OIP3 19 18 22 20.5 23 21.5 16 -4.5 17 -3.5 dBm -- 1960 -- MHz dB Symbol Minimum Typical Maximum Unit
MC13821 Data Sheet: Technical Data, Rev. 1.5 14 Freescale Semiconductor
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 2.0 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G 15 -5 OIP3 15.5 19 IIP3 -0.5 23 1.0 25 2.0 26 17.4 21 19.4 23 dBm 16.4 -4.0 17.4 -3.0 dBm -- 1960 -- MHz dB S11 -- -- S21 15 -6 S12 -20 -3 S22 -- -- -14.6 -6.3 -10 -5 -21.7 -4.2 -- -- dB 16.4 -3.8 17.4 -3.0 dB -9.7 -8.7 -7 -6 dB Symbol IIP3 4 24 P1dBout 8 -- P1dBin -7 -- NF 1.0 3.9 ICC 3.9 2 -- -- 4.45 4 1.2 3.3 5.5 20 -- -- mA A k k dB 1.26 4.5 1.45 6 -6.0 -- -5.0 -- dB 10.5 -- 12.0 -- dBm 5.5 25 6.0 26 dBm Minimum Typical Maximum Unit dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 15
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 -- -- S21 15 -6 S12 -20 -3 S22 -- -- -25 -7.8 -10 -6 -21.1 -4.0 -- -- dB 16.4 -3.9 17.4 -3.0 dB -9.2 -9.8 -7 -7 dB Symbol P1dBout 8.5 -- P1dBin -7 -- NF 1.0 3.9 ICC 2.3 2 -- -- 2.8 4.0 2.0 3.3 3.3 20 -- -- mA A k k dB 1.25 4.7 1.45 6 -6.0 -- -5 -- dB 10.4 -- 12.4 -- dBm Minimum Typical Maximum Unit dBm
R1 = 1.3 k, R2 = 68 , C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass f G 10.5 -6.5 OIP3 8.5 13.5 IIP3 -2 20 P1dBout 1 -- 5.5 -- -- -- 0 21 1 22 dBm 11.5 17.5 13.5 19 dBm 11.5 -3.5 12.5 -3 dBm -- 1960 -- MHz dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 16 Freescale Semiconductor
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Gain High Gain Bypass S11 -- -- S21 10.5 -6.5 S12 -19 -4 S22 -- -- -9.5 -7.6 -7 -6 -20 -7 -- -- dB 11.5 -3.5 13 -3 dB -10 -10 -7 -7 dB Symbol P1dBin -15 -- NF 1.0 3.8 ICC 3.6 2 4.5 4 1.3 68 5.5 20 mA A k dB 1.3 4.7 1.9 6 -10 -- -- dB Minimum Typical Maximum Unit dBm
R1 = 1.8 k, R2 = 330 , C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass f G 14 -6.5 OIP3 12 9.5 IIP3 -2 16 P1dBout 1 -- P1dBin -10 -- -5 -- -4 -- 10 -- 12 -- dBm 0 18 1 18.5 dBm 15 14.5 17 15.5 dBm 15 -3.5 16 -3 dBm -- 1960 -- MHz dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 17
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Gain High Gain Bypass Single Tone IIP3 (Fin = 653.3 MHz, Fout = 1960 MHZ) Single Tone IIP2 (Fin = 980 MHz, Fout = 1960 MHZ) Two Tone IIP2 (F1 = 1880 MHz, F2 = 3840 MHZ, Fout = 1960 MHZ) Two Tone IIP3 (F1 = 1880 MHz, F2 = 5720 MHZ, Fout = 1960 MHZ) S11 -- -- S21 13.8 -- S12 -19 -3 S22 -- -- IIP3 IIP2 IIP2 IIP3 -13 -11 1 -1.5 -17 -7.8 -9 -6 7 3.5 -12 -6 -8 -5 7.5 4.0 dBm dBm dBm dBm -21 -4 -- -- dB 14.8 -3.9 16 -- dB -9.2 -9.8 -7 -7 dB Symbol NF 1.1 3.8 ICC 2.3 2 -- -- 2.8 4 1.8 330 5.5 20 -- -- mA A k dB 1.3 4.7 1.9 6 Minimum Typical Maximum Unit dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 18 Freescale Semiconductor
Application Information
3.3
2140 MHz Application
These application circuits demonstrate performance at 2140 MHz. Resistor values for R1 and R2 are varied to adjust ICC, which also adjusts IP3 performance. Matching component values can be changed to enhance a particular parameter, but usually at the expense of another. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 8. Three variations of the circuit are realized for different requirements for IP3 and ICC. The same matching networks are used on the 2140 MHz circuit as on the 1960 MHz application circuit, with a highpass match on the output and a simple inductor-capacitor network on the LNA input.
NC 12 NC 11 NC 10
NC C5 .01uf Vcc1 C2 0.9pf L2 2.7 nH C6 33 pf
1
MC13821 2140 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 3.3 k C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
4
5
6
L1 4.3 nH
LNA IN C1 33pF
Figure 11. 2140 MHz LNA Application Schematic Table 8. Typical 2140 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 3.3 k (Refer to Figure 11) Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass f G 14.7 -4.4 OIP3 18.2 13 20.7 16.4 22.7 18.5 15.7 -3.4 16.7 -2.5 dBm -- 2140 -- MHz dB Symbol Min Typ Max Unit
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 19
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 -- -- S21 14.7 -6 S12 -20 -3.5 S22 -- -- -12.5 -6.1 -10 -5 -22.2 -4.5 -- -- dB 15.8 -4.1 16.7 -3 dB -8.5 -8.9 -7 -7 dB Symbol IIP3 3.5 18 P1dBout 8.7 -- P1dBin -6 -- NF 1.3 3 ICC 3.9 2 -- -- 4.45 4 1.2 3.3 5.5 20 -- -- mA A k k dB 1.49 3.4 1.65 6 -5.0 -- -4 -- dB 10.7 -- 12.7 -- dBm 5.0 20 6.0 21 dBm Min Typ Max Unit dBm
R1 = 1.2 k, R2 = 3.3 k, R3 = 10 , C1 = 8pF, C2 = 1 pF (Refer to Figure 12) Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G 13.7 -4.9 OIP3 17.2 15.1 IIP3 3.5 20 5.0 22 6.0 24 19.5 17.6 21.5 20.1 dBm 14.5 -4.4 15.5 -3.9 dBm -- 2140 -- MHz dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 20 Freescale Semiconductor
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 2.0 k, R2 = 3.3 k (Refer to Figure 11) Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass f G 14.7 -4.2 OIP3 17.8 18.3 IIP3 2.5 22.5 P1dBout 8.7 -- 10.7 -- 12.5 -- 3.5 24.5 4.5 25.5 dBm 19.2 21.3 21 23.3 dBm 15.7 -3.2 17.5 -2.2 dBm -- 2140 -- MHz dB S11 -- -- S21 13.7 -4.9 S12 -20 -3.5 S22 -- -- -14 -14 -10 -10 -22 -4.4 -- -- dB 14.5 -4.4 15.5 -3.9 dB -11 -12 -10 -10 dB Symbol P1dBout 5.7 -- P1dBin -8 -- NF 1.3 3 ICC 3.9 2 -- -- -- 4.45 4 1.2 3.3 10 5.5 20 -- -- -- mA A k k dB 1.49 4.3 1.65 6 -7 -- -6 -- dB 7.5 -- 9.5 -- dBm Min Typ Max Unit dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 21
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 1.5 k, R2 = 10 k, C2 = 1 pF Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass f G 14.5 -5 OIP3 16.5 13 IIP3 2 18 P1dBout 9.5 -- P1dBin -5 -- -4 -- -3 -- 12 -- 14.5 -- dBm 5 20 5.5 21 dBm 20.7 16 23 18 dBm 15.7 -4 17.5 -3 dBm 2140 MHz dB S11 -- -- S21 14.7 -4 S12 -19 -2.5 S22 -- -- -12.1 -14.6 -10 -10 -20.9 -3.3 -- -- dB 15.7 -3.0 17.5 -- dB -13.7 -17.1 -10 -10 dB Symbol P1dBin -6 -- NF 1.1 3.2 ICC 2.3 2 -- -- 2.8 4 2.0 3.3 3.8 20 -- -- mA A k k dB 1.3 4.2 1.5 6 -5.0 -- -4 -- dB Min Typ Max Unit dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5 22 Freescale Semiconductor
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Gain High Gain Bypass Gain High Gain Bypass Single Tone IIP3 (Fin = 713.3 MHz, Fout = 2140 MHZ) Single Tone IIP2 (Fin = 1070 MHz, Fout = 2140 MHZ) Two Tone IIP2 (F1 = 1950 MHz, F2 = 4090 MHZ, Fout = 2140 MHZ) Two Tone IIP3 (F1 = 1950 MHz, F2 = 6040 MHZ, Fout = 2140 MHZ) S11 -- -- S21 14.5 -5 S12 -19 -3 S22 -10.5 -8 IIP3 IIP2 IIP2 IIP3 -14 -10.5 -4.5 -2 -12.5 -6.1 -9.5 -5.5 1.5 5 -- -- -- -- -- -- dBm dBm dBm dBm -20 -4 -- -- dB 15.7 -4 17.5 -- dB -8.5 -8.9 -7 -7 dB Symbol NF 1.1 4 ICC 3.4 2 -- -- 4.45 4 1.5 10 5.5 20 -- -- mA A k k dB 1.3 5 1.8 6 Min Typ Max Unit dB
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 23
Application Information
NC
NC 11
NC 10
2140 MHz
12
NC C5 .01uf Vcc1 LNA OUT C2 R3 1 pf 10 L2 2.7 nH C6 33 pf
1
MC13821 2140 MHz LNA
9
Gnd
2
8
Gain
3 R2 3.3k C3 33 pf C4 .01uf R1 1.2 k Vcc3 Rbias
7
Enable
4
5
6
L1 4.3 nH
LNA IN C1 8 pF
Figure 12. 2140 MHz LNA Application Schematic with R3 Output Resistor Added
MC13821 Data Sheet: Technical Data, Rev. 1.5 24 Freescale Semiconductor
Application Information
3.4
2400 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 9. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
NC 12 NC 11 NC 10
N C C5 .01uf Vcc1 C2 0.6pf L2 2.4 nH C6 33 pf
1
MC13821 2400 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 3.3 k C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
4
5
6
L1 2.7 nH
LNA IN C1 33pF
Figure 13. 2400 MHz LNA Application Schematic Table 9. Typical 2400 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G 13 -5 OIP3 18.5 15 IIP3 5.5 20 7.0 22 7.5 23 21 19 22.5 20 dBm 14 -3.8 15 -3 dBm -- 2400 -- MHz dB Symbol Minimum Typical Maximum Unit
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 25
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 2.0 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass f G 13 -5 OIP3 17 17 IIP3 3.0 22 P1dBout 8.5 -- 10 -- 12 -- 4.0 24 5.0 25 dBm 18.5 20 20 22 dBm 14 -4 15 -3 dBm -- 2400 -- MHz dB S11 -- -- S21 13 -5 S12 -19 -3 S22 -- -- -11 -7.0 -9 -6 -20.2 -4.0 -- -- dB 14 -4.1 15 -3 dB -8.5 -8.9 -7 -7 dB Symbol P1dBout 8 -- P1dBin -5 -- NF 1.35 -- ICC 3.4 2 -- -- 4.45 4 1.2 3.3 5.5 20 -- -- mA A k k dB 1.55 3.8 1.7 6 -4 -- -3 -- dB 10.7 -- 12 -- dBm Minimum Typical Maximum Unit dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5 26 Freescale Semiconductor
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic In Ref P1dB High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 -- -- S21 13 -4.5 S12 -19 -3 S22 -- -- -10 -9.1 -9 -8 -20 -3.8 -- -- dB 14 -3.6 15 -2.9 dB -10 -9.7 -8 -8 dB Symbol P1dBin -5 -- NF 1.3 3.2 ICC 2.3 2 -- -- 2.8 4 2.0 3.3 4.5 20 -- -- mA A k k dB 1.49 4.2 1.65 6 -4.0 -- -3 -- dB Minimum Typical Maximum Unit dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 27
Printed Circuit Board
4
Printed Circuit Board
R2 C2 C3
L2
Q1
L1 C1
R1 C4
MC13821 V1R1
Note: Components C5 and C6 are located on the back of the board Figure 14. Front Side
Note: Components C5 and C6 are located on the back of the board
C5 C6
Figure 15. Back Side
MC13821 Data Sheet: Technical Data, Rev. 1.5 28 Freescale Semiconductor
Printed Circuit Board
Table 10. Bill of Materials
Component 1575 MHz C1 C2 C3 C4 C5 C6 L2 L1 R1 R2 Q1 22 pF 1.0 pF 33 pF .01 F .01 F 33 pF 5.6 nH 5.6 nH 1.2 or 2 k 620 or 680 MC13821 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Output match Input match Bias for 4.45 or 2.8 mA Stability Value Case Manufacturer Comments
1960 MHz (16 dB Gain) C1 C2 C3 C4 C5 C6 L1 L2 R1 R2 Q1 33 pF 0.9 pF 33 pF .01 F .01 F 33 pF 4.3 nH 2.7 nH 1.2 or 2 k 3.3 k MC13821 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft Coilcraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match Bias for 4.45 or 2.8 mA Stability
1960 MHz (11.5 dB Gain) C1 C2 C3 C4 C5 C6 L1 L2 15 pF 1.2 pF 33 pF .01 F .01 F 33 pF 4.3 nH 2.7 nH 402 402 402 402 402 402 1005 1005 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 29
Printed Circuit Board
Table 10. Bill of Materials (continued)
Component R2 R1 Q1 Value 68 1.3 k MC13821 Case 402 402 QFN-12 Manufacturer KOA KOA Freescale Comments Stability Bias for 5.5 mA max.
1960 MHz (15 dB Gain) C1 C2 C3 C4 C5 C6 L1 L2 R1 R2 Q1 8 pF 1.2 pF 33 pF .01 F .01 F 33 pF 4.7 nH 2.4 nH 1.8 k 330 MC13821 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match Bias for 5.5 mA max. Stability
2140 MHz (Refer to Figure 11) C1 C2 C3 C4 C5 C6 L2 L1 R1 R2 Q1 33 pF 0.9 pF 33 pF .01 F .01 F 33 pF 2.7 nH 4.3 nH 1.2 or 2 k 3.3 k MC13821 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Output match Input match Bias for 4.45 or 2.8 mA Stability
2140 MHz (Refer to Figure 12) C1 C2 C3 C4 C5 8 pF 1 pF 33 pF .01 F .01 F 402 402 402 402 402 Murata Murata Murata Murata Murata Input match Output match RF bypass Low freq bypass Low freq bypass
MC13821 Data Sheet: Technical Data, Rev. 1.5 30 Freescale Semiconductor
Printed Circuit Board
Table 10. Bill of Materials (continued)
Component C6 L1 L2 R1 R2 R3 Q1 Value 33 pF 4.3 nH 2.7 nH 1.2 k 3.3 k 10 MC13821 Case 402 1005 1005 402 402 402 QFN-12 Manufacturer Murata CoilCraft CoilCraft KOA KOA KOA Freescale Comments RF bypass Input match Output match Bias for 5.5 mA Stability Stability
2140 MHz (Refer to Figure 11) C1 C2 C3 C4 C5 C6 L1 L2 R1 R2 Q1 2400 MHz C1 C2 C3 C4 C5 C6 L1 L2 R2 R1 Q1 33 pF 0.6 pF 33 pF .01 F .01 F 33 pF 2.7 nH 2.4 nH 3.3 k 1.2 or 2 k MC13821 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match Stability Bias for 4.5 or 2.8 mA 33 pF 1.0 pF 33 pF .01 F .01 F 33 pF 4.3 nH 2.7 nH 1.5 k 10 k MC13821 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft Coilcraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match Bias for 4.45 mA Stability
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 31
Scattering Parameters
5
Scattering Parameters
Table 11. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain = 2.75 V, Enable = 2.75 V, Rbias resistor R1 = 2 k), ICC = 2.6 mA f GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.852 0.836 0.803 0.814 0.782 0.772 0.752 0.718 0.672 0.688 0.695 0.686 0.653 0.661 0.646 0.639 0.628 0.608 0.61 0.609 0.637 0.57 0.536 0.515 0.506 0.489 0.483 0.487 0.488 -29.22 -32.9 -36.02 -42.84 -42.6 -45.55 -47.28 -50.24 -52.29 -49.98 -53.95 -54.86 -57.19 -57.81 -60.4 -62.48 -61.9 -63.13 -63.96 -65.96 -69.48 -74.63 -75.03 -75.6 -75.28 -73.7 -74.54 -76.91 -78.25 |S11| 7.029 7.279 7.034 6.856 6.687 6.29 6.242 6.082 5.696 5.662 5.499 5.348 5.334 5.098 5.035 4.766 4.575 4.529 4.366 4.251 4.307 4.168 3.933 3.819 3.665 3.572 3.523 3.495 3.484 S21 142.03 137.43 133.48 127 125.21 122.03 116.95 114.12 112.14 107.49 104.8 101.62 97.81 95.37 90.65 86.29 86.75 82.12 79.31 77.33 75.4 68.94 65.73 62.83 61.56 60.5 58.09 55.25 51.93 |S11| 0.021 0.024 0.027 0.029 0.031 0.034 0.036 0.039 0.04 0.043 0.044 0.047 0.05 0.052 0.058 0.058 0.059 0.06 0.063 0.067 0.072 0.073 0.075 0.074 0.074 0.07 0.07 0.075 0.082 S12 75.16 73.13 70.95 66.71 68.53 65.83 65.66 64.76 61.29 61.9 60.95 60.42 59.47 60.14 56 52.65 51.95 52.38 53.62 51.2 50.86 46.36 42.72 42.14 39.24 39.17 43.49 46.63 45.9 |S11| 0.956 0.946 0.966 0.887 0.924 0.898 0.897 0.912 0.943 0.882 0.865 0.866 0.892 0.863 0.844 0.818 0.8 0.78 0.779 0.777 0.811 0.756 0.716 0.697 0.683 0.702 0.716 0.714 0.699 S22 -14.42 -15.76 -19.49 -17.77 -22.03 -23.58 -25.56 -26.44 -30.51 -35.18 -35.67 -36.55 -41.25 -42.78 -46.94 -49.01 -50.61 -51.67 -52.93 -54.38 -57.38 -63.02 -62.94 -64.16 -63.26 -63.69 -66.71 -70.44 -74.6
MC13821 Data Sheet: Technical Data, Rev. 1.5 32 Freescale Semiconductor
Scattering Parameters
Table 12. Bypass Mode Scattering Parameters
((VCC1 and VCC3 = 2.75V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1= 2 k), ICC = 3.0 A) f (GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.549 0.511 0.47 0.458 0.434 0.421 0.404 0.384 0.36 0.362 0.367 0.363 0.35 0.355 0.335 0.332 0.322 0.32 0.319 0.323 0.354 0.317 0.296 0.284 0.283 0.274 0.269 0.265 0.261 -51.13 -53.94 -55.73 -59.65 -58.46 -59.33 -59.6 -61.06 -62.48 -59.49 -60.21 -60.18 -63.26 -63.18 -66.36 -65.87 -63.97 -63.46 -63.28 -63.96 -65.66 -73.59 -74.61 -74.6 -72.89 -72.04 -74.74 -77.34 -76.71 |S11| 0.578 0.596 0.608 0.615 0.624 0.629 0.634 0.633 0.638 0.638 0.639 0.64 0.645 0.639 0.64 0.64 0.64 0.639 0.632 0.627 0.64 0.637 0.622 0.616 0.616 0.618 0.618 0.609 0.603 S21 17.83 13.17 8.45 3.3 1.11 -2.37 -5.19 -8.02 -10.97 -13.09 -15.43 -17.77 -20.27 -22.63 -24.42 -26.93 -28.95 -31.11 -33.88 -35.14 -36.78 -40.56 -42.77 -44.14 -45.7 -47.38 -50.21 -52.62 -54.36 |S11| 0.583 0.6 0.614 0.617 0.628 0.635 0.639 0.639 0.641 0.643 0.643 0.645 0.649 0.643 0.643 0.645 0.644 0.642 0.638 0.633 0.645 0.643 0.629 0.621 0.619 0.622 0.623 0.615 0.607 S12 18.83 14.15 10.08 5.12 2.52 -0.96 -3.8 -6.66 -9.5 -11.89 -14.26 -16.58 -19.08 -21.39 -23.2 -25.56 -27.79 -30.01 -32.07 -33.64 -35.11 -38.92 -41.1 -42.65 -43.94 -45.84 -48.62 -51.03 -52.96 |S11| 0.578 0.542 0.524 0.455 0.453 0.42 0.407 0.394 0.388 0.374 0.353 0.335 0.348 0.327 0.342 0.324 0.309 0.294 0.279 0.274 0.297 0.282 0.245 0.23 0.236 0.245 0.238 0.212 0.194 S22 -41.21 -42.25 -45.13 -43.82 -46.74 -48.02 -48.56 -47.62 -49.7 -53.61 -53.66 -53.3 -53.86 -54.83 -57.82 -60.95 -63.15 -64.43 -64.25 -62.49 -62.47 -72.82 -73.08 -70.36 -67.03 -68.8 -75.51 -77.5 -77.94
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 33
Scattering Parameters
Table 13. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain and Enable = 2.75 V, Rbias resistor R1 = 1.2 k, ICC = 4.8 mA) f (GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.784 0.765 0.721 0.724 0.692 0.678 0.662 0.626 0.576 0.594 0.599 0.594 0.56 0.568 0.548 0.546 0.543 0.532 0.527 0.529 0.551 0.485 0.454 0.434 0.433 0.436 0.437 0.437 0.433 -32.04 -35.9 -39 -45.16 -44.87 -47.17 -48.64 -51.75 -53.11 -49.59 -52.85 -54.14 -56.18 -57.13 -58.62 -59.79 -59.25 -59.9 -61.63 -62.78 -67.21 -70.76 -71.28 -70.94 -67.82 -66.18 -68.3 -72.51 -73.15 |S11| 10.275 10.162 9.646 9.184 8.773 8.23 7.98 7.638 7.185 6.972 6.691 6.444 6.34 6.029 5.885 5.568 5.318 5.189 4.979 4.816 4.839 4.649 4.382 4.207 4.048 3.936 3.847 3.81 3.767 S21 132.74 127.59 122.89 116.28 114.36 110.64 106.21 103.36 100.91 96.71 93.81 90.92 87.3 85.12 80.96 76.96 76.8 72.95 70.13 68.35 66.22 60.62 57.65 55.39 54.44 52.8 50.72 48.36 45.48 |S11| 0.021 0.022 0.025 0.027 0.029 0.033 0.034 0.037 0.039 0.041 0.042 0.044 0.049 0.05 0.054 0.056 0.057 0.059 0.062 0.064 0.072 0.072 0.074 0.072 0.068 0.069 0.072 0.078 0.082 S12 72.91 71.83 68.97 67.34 67.52 67.56 66.62 64.27 63.47 62.78 62.14 62.34 60.88 60.42 57.9 56.61 54.83 54.79 53.59 53.44 52.3 47.22 44.14 42.21 41.81 43.96 47.68 46.81 45.71 |S11| 0.92 0.907 0.923 0.842 0.877 0.846 0.845 0.858 0.893 0.835 0.816 0.817 0.843 0.817 0.798 0.774 0.761 0.742 0.741 0.743 0.768 0.715 0.68 0.666 0.669 0.674 0.684 0.687 0.676 S22 -15.77 -16.82 -20.31 -18.21 -22.39 -23.69 -25.47 -25.98 -29.67 -34.46 -34.49 -35.3 -39.86 -41.18 -45.47 -46.98 -48.63 -49.56 -50.7 -52 -55.57 -60.12 -60.09 -60.36 -60.12 -61.04 -63.24 -66.49 -70.55
MC13821 Data Sheet: Technical Data, Rev. 1.5 34 Freescale Semiconductor
Scattering Parameters
Table 14. Bypass Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1 = 1.2 k, ICC = 3 A) f (GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.556 0.514 0.475 0.459 0.427 0.412 0.391 0.379 0.368 0.358 0.352 0.346 0.341 0.334 0.329 0.319 0.308 0.299 0.293 0.285 0.279 0.274 0.267 0.27 0.264 0.261 0.26 0.26 0.265 -44.11 -46.8 -49.46 -50.05 -50.66 -51.99 -52.85 -53.91 -53.94 -54.86 -55.36 -55.58 -55.61 -56.07 -56.92 -57.96 -57.61 -57.89 -59.25 -60.49 -62.48 -64.02 -66.58 -68.28 -70.53 -72.44 -73.31 -73.49 -73.26 |S11| 0.573 0.591 0.6 0.618 0.623 0.633 0.635 0.637 0.638 0.64 0.641 0.641 0.641 0.638 0.635 0.636 0.64 0.641 0.64 0.636 0.636 0.634 0.629 0.623 0.618 0.617 0.616 0.613 0.61 S21 20.27 15.11 10.38 6.77 3.34 -0.34 -3.09 -6.45 -8.92 -11.49 -14.09 -16.37 -18.68 -20.97 -23.12 -24.75 -26.81 -29.13 -31.4 -33.55 -35.59 -37.84 -39.74 -42.19 -43.48 -45.42 -47.61 -49.49 -52.15 |S11| 0.573 0.591 0.599 0.617 0.621 0.632 0.634 0.636 0.638 0.639 0.64 0.641 0.641 0.639 0.633 0.636 0.64 0.64 0.642 0.636 0.635 0.633 0.63 0.623 0.616 0.616 0.615 0.613 0.61 S12 20.39 15.3 10.66 6.98 3.51 -0.19 -2.98 -6.18 -8.66 -11.33 -13.92 -16.17 -18.47 -20.85 -22.91 -24.45 -26.59 -28.92 -31.04 -33.11 -35.51 -37.69 -39.66 -42.06 -43.19 -45.19 -47.35 -49.26 -51.84 |S11| 0.595 0.549 0.511 0.479 0.462 0.43 0.421 0.395 0.384 0.374 0.358 0.345 0.334 0.321 0.312 0.314 0.306 0.295 0.291 0.277 0.272 0.258 0.247 0.232 0.241 0.241 0.227 0.209 0.179 S22 -42.94 -43.78 -43.02 -46.66 -47.17 -49.25 -49.35 -50.53 -51.37 -52.64 -53.9 -54.87 -56.07 -56.45 -56.2 -57.47 -59.76 -61.28 -62.5 -62.84 -65.72 -67.26 -67.95 -68.55 -64.77 -69.24 -74.2 -76.39 -78.56
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 35
Scattering Parameters
Table 15. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 1.2 k, ICC = 4.8 mA) f (GHz) 1 1.575 1.9 2.14 2.4 NFmin (dB) 1.11 0.99 0.96 0.96 0.97 Gamma Opt Mag 0.27 0.29 0.30 0.30 0.30 Ang 25.3 40.8 46.9 50.1 54.0 Rn () 14 13 12.5 12.5 12 rn () 0.28 0.26 0.25 0.25 0.24 GNF (dB) 26.21 22.63 20.83 19.8 18.3
K
0.63 0.74 0.70 0.78 0.89
Table 16. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 2 k, ICC = 2.8 mA) f (GHz) 1 1.575 1.9 2.14 2.4 NFmin (dB) 1.16 1.02 0.97 0.96 0.95 Gamma Opt Mag 0.23 0.35 0.37 0.37 0.37 Ang 27.6 39.0 46.2 49.7 54.1 Rn () 15.5 15 14 14 13.5 rn () 0.31 0.3 0.28 0.28 0.27 GNF (dB) 26.09 22.57 20.81 19.79 18.3
K
0.48 0.56 0.53 0.61 0.77
MC13821 Data Sheet: Technical Data, Rev. 1.5 36 Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 1.575 NFmin 1.02 Gamma-Opt 0.30/_38.2 Rn () 13.5 K 0.74
Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 k
(shaded regions are potentially unstable) f(GHz) 1.575 NFmin 0.97 Gamma-Opt 0.34/_39.1 Rn () 17.0 K 0.56
Figure 17. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 k
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 37
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 1.9 NFmin 0.96 Gamma-Opt 0.30/_46.9 Rn () 12.5 K 0.68
Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 k
(shaded regions are potentially unstable) f(GHz) 1.9 NFmin 0.97 Gamma-Opt 0.37/_46.2 Rn () 14.0 K 0.50
Figure 19. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 k
MC13821 Data Sheet: Technical Data, Rev. 1.5 38 Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 2.1 NFmin 0.96 Gamma-Opt 0.30/_50.1 Rn () 12.5 K 0.76
Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
(shaded regions are potentially unstable) f(GHz) 2.1 NFmin 0.96 Gamma-Opt 0.37/_49.7 Rn () 14.0 K 0.58
Figure 21. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 39
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 2.3 NFmin 0.96 Gamma-Opt 0.30/_52.8 Rn () 12.0 K 0.85
Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 k
(shaded regions are potentially unstable) f(GHz) 2.3 NFmin 0.95 Gamma-Opt 0.38/_53 Rn () 13.5 K 0.70
Figure 23. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 k
MC13821 Data Sheet: Technical Data, Rev. 1.5 40 Freescale Semiconductor
Packaging
6
Packaging
Figure 24. Outline Dimensions for QFN-12 (Case Outline 1345-01, Issue A)
MC13821 Data Sheet: Technical Data, Rev. 1.5 Freescale Semiconductor 41
7
Reference Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com.
8
Revision History
Table 17. Revision History
Location Throughout Revision Changed document type from "Advance Information" to" Technical Data."
Table 17 summarizes revisions to this document since the previous release (Rev. 1.4).
How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064, Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. FreescaleTM and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2005-2009. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
Document Number: MC13821 Rev. 1.5 09/2009

▲Up To Search▲

Price & Availability of MC1382109

	To Download MC1382109 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .